View HSSR-7110_212294.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

90 V/1.0 , Hermetically Sealed, Power MOSFET Optocoupler Technical Data
HSSR-711X* 5962-9314001
*See matrix for available extensions
Features
* Dual Marked with Device Part Number and DSCC Standard Microcircuit Drawing * ac/dc Signal & Power Switching * Compact Solid-State Bidirectional Switch * Manufactured and Tested on a MIL-PRF-38534 Certified Line * QML-38534 * MIL-PRF-38534 Class H * Space Level Processing Available * Hermetically Sealed 8-Pin Dual In-Line Package * Small Size and Weight * Performance Guaranteed over -55C to +125C * Connection A 0.8 A, 1.0 * Connection B 1.6 A, 0.25 * 1500 Vdc Withstand Test Voltage * High Transient Immunity * 5 Amp Output Surge Current
Applications
* Military and Space * High Reliability Systems * Standard 28 Vdc and 48 Vdc Load Driver * Standard 24 Vac Load Driver * Aircraft Controls * ac/dc Electromechanical and Solid State Relay Replacement * I/O Modules * Harsh Industrial Environments
eight-pin, hermetic, dual-in-line, ceramic packages. The devices operate exactly like a solid-state relay. The products are capable of operation and storage over the full military temperature range and can be purchased as a standard product (HSSR-7110), with full MIL-PRF-38534 Class H testing (HSSR-7111), or from the DSCC Standard Microcircuit Drawing (SMD) 5962-93140. These devices may be purchased with a variety of lead bend and plating options. See Selection Guide Table for details. Standard Microcircuit (SMD) parts are available for each lead style.
Description
The HSSR-7110, HSSR-7111 and SMD 5962-9314001 are single channel power MOSFET optocouplers, constructed in
Functional Diagrams
CONNECTION A AC/DC CONNECTION IO 1 NC IF +2 VF -3 4 NC 6 5 - 7 VO VF -3 4 NC 6 5 8 + IF +2 7 1 NC 8 CONNECTION B DC CONNECTION IO + VO -
TRUTH TABLE INPUT H L OUTPUT CLOSED OPEN
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.
2
All devices are manufactured and tested on a MIL-PRF-38534 certified line and are included in the DSCC Qualified Manufacturers List, QML-38534 for Hybrid Microcircuits. Each device contains an AlGaAs light emitting diode optically coupled to a photovoltaic diode stack which drives two discrete power MOSFETs. The device operates as a solid-state replacement for single-pole, normally open, (1 Form A) relays used for general purpose switching of signals and loads in high reliability applications.
The devices feature logic level input control and very low output on-resistance, making them suitable for both ac and dc loads. Connection A, as shown in the Functional Diagram, allows the device to switch either ac or dc loads. Connection B, with the polarity and pin configuration as shown, allows the device to switch dc loads only. The advantage of Connection B is that the on-resistance is significantly reduced, and the output current capability increases by a factor of two.
The devices are convenient replacements for mechanical and solid state relays where high component reliability with standard footprint lead configuration is desirable. Devices may be purchased with a variety of lead bend and plating options. See Selection Guide table for details. Standard Microcircuit Drawing (SMD) parts are available for each package and lead style. The HSSR-7110, HSSR-7111, and SMD 5962-93140 are designed to switch loads on 28 Vdc power systems. They meet 80 V surge and 600 V spike requirements.
Selection Guide-Package Styles and Lead Configuration Options
HP Part # and Options Commercial MIL-PRF-38534 Class H Standard Lead Finish Solder Dipped Butt Joint/Gold Plate Gull Wing/Soldered Crew Cut/Gold Plate SMD Part # Prescript for all below Either Gold or Soldered Gold Plate Solder Dipped Butt Joint/Gold Plate Butt Joint/Soldered Gull Wing/Soldered Crew Cut/Gold Plate Crew Cut/Soldered HSSR-7110 HSSR-7111 Gold Option #200 Option #100 Option #300 Option #600 59629314001HPX 9314001HPC 9314001HPA 9314001HYC 9314001HYA 9314001HXA 9314001HZC 9314001HZA
9.40 (0.370) 9.91 (0.390) 0.76 (0.030) 1.27 (0.050) 4.32 (0.170) MAX.
Outline Drawing
8-pin DIP Through Hole
8.13 (0.320) MAX. 7.16 (0.282) 7.57 (0.298)
0.51 (0.020) MIN.
3.81 (0.150) MIN.
0.20 (0.008) 0.33 (0.013)
2.29 (0.090) 2.79 (0.110)
0.51 (0.020) MAX. NOTE: DIMENSIONS IN MILLIMETERS (INCHES).
7.36 (0.290) 7.87 (0.310)
3
Device Marking
HP LOGO HP P/N DSCC SMD* DSCC SMD* PIN ONE/ ESD IDENT HP QYYWWZ XXXXXX XXXXXXX XXX USA 50434 * QUALIFIED PARTS ONLY COMPLIANCE INDICATOR,* DATE CODE, SUFFIX (IF NEEDED) COUNTRY OF MFR. HP FSCN*
Absolute Maximum Ratings
Storage Temperature Range ........................................ -65C to +150C Operating Ambient Temperature - TA .......................... -55C to +125C Junction Temperature - TJ ......................................................... +150C Operating Case Temperature - TC ......................................... +145C [1] Lead Solder Temperature ............................................... 260C for 10 s (1.6 mm below seating plane) Average Input Current - IF ........................................................... 20 mA Peak Repetitive Input Current - IFPK ............................................ 40 mA (Pulse Width < 100 ms; duty cycle < 50%) Peak Surge Input Current - IFPK surge ....................................... 100 mA (Pulse Width < 0.2 ms; duty cycle < 0.1%) Reverse Input Voltage - VR ............................................................... 5 V Average Output Current - Figure 2 Connection A - IO ....................................................................... 0.8 A Connection B - IO ...................................................................... 1.6 A Single Shot Output Current - Figure 3 Connection A - IOPK surge (Pulse width < 10 ms) ...................... 5.0 A Connection B - IOPK surge (Pulse width < 10 ms) ................... 10.0 A Output Voltage Connection A - VO ...................................................... -90 V to +90 V Connection B - VO .......................................................... 0 V to +90 V Average Output Power Dissipation - Figure 4 ....................... 800 mW[2]
Thermal Resistance
Maximum Output MOSFET Junction to Case - JC = 15C/W
ESD Classification
(MIL-STD-883, Method 3015) .......................................... ( ), Class 2
Recommended Operating Conditions
Parameter Input Current (on) Input Voltage (off) Operating Temperature Symbol IF(ON) VF(OFF) TA Min. 5 0 -55 Max. 20 0.6 +125 Units mA V C
4
Hermetic Optocoupler Options
Option 100 Description Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on commercial and hi-rel product.
4.32 (0.170) MAX.
0.51 (0.020) MIN. 2.29 (0.090) 2.79 (0.110)
1.14 (0.045) 1.40 (0.055) 0.51 (0.020) MAX.
0.20 (0.008) 0.33 (0.013) 7.36 (0.290) 7.87 (0.310)
200
Lead finish is solder dipped rather than gold plated. This option is available on commercial and hi-rel product. DSCC Drawing part numbers contain provisions for lead finish. Surface mountable hermetic optocoupler with leads cut and bent for gull wing assembly. This option is available on commercial and hi-rel product. This option has solder dipped leads.
300
4.57 (0.180) MAX. 0.20 (0.008) 0.33 (0.013) 9.65 (0.380) 9.91 (0.390)
4.57 (0.180) MAX.
0.51 (0.020) MIN. 2.29 (0.090) 2.79 (0.110)
1.40 (0.055) 1.65 (0.065) 0.51 (0.020) MAX.
5 MAX.
600
Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on commercial and hi-rel product.
3.81 (0.150) MAX. 0.20 (0.008) 0.33 (0.013) 1.02 (0.040) TYP. 7.36 (0.290) 7.87 (0.310)
0.51 (0.020) MIN. 2.29 (0.090) 2.79 (0.110)
Note: Dimensions in millimeters (inches).
5
Electrical Specifications
TA =-55C to +125C, unless otherwise specified. See note 9.
Group A, Subgroup 1, 2, 3 1, 2, 3
Parameter Output Withstand Voltage Output Connection OnA Resistance Connection B Output Leakage Current Input Forward Voltage Input Reverse Breakdown Voltage Input-Output Insulation Turn On Time
Sym. |VO(OFF)| R(ON)
Test Conditions VF = 0.6 V, IO = 10 A IF = 10 mA, IO = 800 mA, (pulse duration 30 ms) IF = 10 mA, IO = 1.6 A, (pulse duration 30 ms)
Min. Typ.* Max. Units 90 110 0.40 1.0 V
Fig. 5 6,7
Notes
3
0.12 10-4 1.0 5.0 1.24
0.25 10 1.7 A V V 1.0 A 4, 5 8 9
IO(OFF) VF VR II-O
1, 2, 3 1, 2, 3 1, 2, 3 1
VF = 0.6 V, VO = 90 V, IF = 10 mA IR = 100 A RH 45%, t = 5 s, VI-O = 1500 Vdc, TA = 25C
tON
9, 10, 11 IF = 10 mA, VDD = 28 V, IO = 800 mA 9,10,11 IF = 10 mA, VDD = 28 V, IO = 800 mA 9 VPEAK = 50 V, CM = 1000 pF, CL = 15 pF, R M 1 M VDD = 5 V, VI-O(PEAK) = 50 V, RL = 20 k, CL = 15 pF 1000
1.25
6.0
ms
1,10, 11, 12, 13 1,10, 14,15 17
Turn Off Time Output Transient Rejection Input-Output Transient Rejection
tOFF dVo dt dVio dt
0.02
0.25
ms V/s
9
500
V/s
18
*All typical values are at TA = 25C, IF(ON) = 10 mA, VF(OFF) = 0.6 V unless otherwise specified.
6
Typical Characteristics
All typical values are at TA = 25C, IF(ON) = 10 mA, VF(OFF) = 0.6 V unless otherwise specified. Parameter Output Off-Capacitance Output Offset Voltage Input Diode Temperature Coefficient Input Capacitance Input-Output Capacitance Input-Output Resistance
Turn On Time With Peaking
Symbol CO(OFF) |VOS| VF/TA CIN CI-O RI-O
tON
Test Conditions VO = 28 V, f = 1 MHz IF = 10 mA, IO = 0 mA IF = 10 mA VF = 0 V, f = 1 MHz VI-O = 0 V, f = 1 MHz VI-O = 500 V, t = 60 s
IFPK = 100 mA, IFSS = 10 mA VDD = 28 V, IO = 800 mA
Typ. 145 2 -1.4 20 1.5 1013
0.22
Units pF V mV/C pF pF
ms
Fig. 16 19
Notes 7
8 4 4
1 6
Notes: 1. Maximum junction to case thermal resistance for the device is 15C/W, where case temperature, TC, is measured at the center of the package bottom. 2. For rating, see Figure 4. The output power PO rating curve is obtained when the part is handling the maximum average output current IO as shown in Figure 2. 3. During the pulsed RON measurement (IO duration <30 ms), ambient (TA) and case temperature (T C) are equal. 4. Device considered a two terminal device: pins 1 through 4 shorted together and pins 5 through 8 shorted together. 5. This is a momentary withstand test, not an operating condition. 6. For a faster turn-on time, the optional peaking circuit shown in Figure 1 may be implemented. 7. VOS is a function of IF , and is defined between pins 5 and 8, with pin 5 as the reference. VOS must be measured in a stable ambient (free of temperature gradients). 8. Zero-bias capacitance measured between the LED anode and cathode. 9. Standard parts receive 100% testing at 25C (Subgroups 1 and 9). SMD and class H parts receive 100% testing at 25C, 125C and -55C (Subgroups 1 and 9, 2 and 10, 3 and 11 respectively).
CAUTION: Maximum Switching Frequency - Care should be taken during repetitive switching of loads so as not to exceed the maximum output current, maximum output power dissipation, maximum case temperature, and maximum junction temperature.
HSSR-7110 1 VCC (+5V) IF +2 VF -3 R2 1200 R1 330 R3 C 15 F 4 7 6 5 8
IN 1/4 54ACTOO R1 = REQUIRED CURRENT LIMITING RESISTOR FOR I F (ON) = 10 mA. R2 = PULL-UP RESISTOR FOR VF (OFF) < 600 mV; IF (V CC - VOH) < 600 mV, OMIT R2. R3, C = OPTIONAL PEAKING CIRCUIT. TYPICAL VALUES R3 () - 330 100 33 IF (PK) (mA) 10 (NO PK) 20 40 100 HSSR-7110 tON (ms) 2.0 1.0 0.48 0.22
1/4 54ACTOO*
* USE SECOND GATE IF IF (PK) > 50 mA REMINDER: TIE ALL UNUSED INPUTS TO GROUND OR V CC
Figure 1. Recommended Input Circuit.
7
IOPK SURGE - OUTPUT CURRENT - A
1.0
12 11 10 9 8 7 6 5 4 3 10 200 400 600 800 1000 CONNECTION-A CONNECTION-B IF 10 mA
PO - OUTPUT POWER DISSIPATION - W
1.0
IO - OUTPUT CURRENT - A
0.8
0.8
0.6
0.6
0.4 CONNECTION - A 0.2 IF 10 mA CA = 40 C/W CA = 80 C/W 0 -55 -25 5 35 65 95 125 155
0.4 CONNECTION - A IF 10 mA CA = 40 C/W CA = 80 C/W 5 35 65 95 125 155
0.2
0 -55 -25
TA - AMBIENT TEMPERATURE - C
PULSE DURATION - ms
TA - AMBIENT TEMPERATURE - C
Figure 2. Maximum Average Output Current Rating vs. Ambient Temperature.
Figure 3. Single Shot (non-repetitive) Output Current vs. Pulse Duration.
Figure 4. Output Power Rating vs. Ambient Temperature.
1.10
1.8
0.8
IO - OUTPUT CURRENT - A
NORMALIZED TYPICAL OUTPUT WITHSTAND VOLTAGE
VF = 0.6 V 1.08 I = 10 A O 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 -55 -25 5 35 65 95 125
NORMALIZED TYPICAL OUTPUT RESISTANCE
CONNECTION - A IF 10 mA 1.6 I = 800 mA O (PULSE DURATION 1.4 1.2 1.0 0.8 0.6 -55
30 ms)
CONNECTION - A 0.6 IO 10 mA IO (PULSE DURATION 30 ms) 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -0.6 -0.4 -0.2 0 TA = 125C TA = 25C TA = -55C
-25
5
35
65
95
125
0.2
0.4
0.6
TA - AMBIENT TEMPERATURE - C
TA - AMBIENT TEMPERATURE - C
VO - OUTPUT VOLTAGE - V
Figure 5. Normalized Typical Output Withstand Voltage vs. Temperature.
Figure 6. Normalized Typical Output Resistance vs. Temperature.
Figure 7. Typical On State Output I-V Characteristics.
IO(OFF) - OUTPUT LEAKAGE CURRENT - A
10-8
CONNECTION A VF = 0.6 V VO = 90 V
IF - INPUT FORWARD CURRENT - A
10-7
10-1 10-2 10-3 TA = 125C 10
-4
10-9
10
-10
10-5 10-6 0.4
TA = 25C TA = -55C 0.6 0.8 1.0 1.2 1.4 1.6
10
-11
20
35
65
95
125
TA - TEMPERATURE - C
VF - INPUT FORWARD VOLTAGE - V
Figure 8. Typical Output Leakage Current vs. Temperature.
Figure 9. Typical Input Forward Current vs. Input Forward Voltage.
8
VDD
50% IF P.W. = 15 ms
50%
PULSE GEN. ZO = 50 tf = tr = 5 ns 1 IF +2 VF -3
HSSR-7110 8 7 6 5
RL VO MONITOR NODE CL = 25 pF (CL INCLUDES PROBE AND FIXTURE CAPACITANCE)
VO 10%
90%
IF MONITOR R (MONITOR) 200
4
tON
tOFF
GND
GND
Figure 10. Switching Test Circuit for tON, tOFF.
2.6 2.4
TON - TURN ON TIME - ms
TON - TURN ON TIME - ms
TON - TURN ON TIME - ms
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -55
CONNECTION A IF = 10 mA VDD = 28 V IO = 800 mA
3.0 2.6 2.2 1.8 1.4 1.0 0.6 0.2 5 10
2.0
CONNECTION A VDD = 28 V IO = 800 mA TA = 25C
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
CONNECTION - A IF = 10 mA IO = 800 mA TA = 25C
-25
5
35
65
95
125
15
20
0
0
10 20
30 40 50 60 70 80 90
TA - TEMPERATURE - C
IF - INPUT CURRENT - mA
VDD - VOLTAGE - V
Figure 11. Typical Turn On Time vs. Temperature.
Figure 12. Typical Turn On Time vs. Input Current.
Figure 13. Typical Turn On Time vs. Voltage.
15.0
45
CO(OFF) - OUTPUT OFF CAPACITANCE - pF
440 400 360 320 280 240 200 160 120 0 5 10 15 20 25 30 CONNECTION A f = 1 MHz TA = 25C
14.6 14.4 14.2 14.0 13.8 13.6 13.4 13.2 -55 -25 5 35
TOFF - TURN OFF TIME - s
TOFF - TURN OFF TIME - s
14.8
CONNECTION A IF = 10 mA VDD = 28 V IO = 800 mA
40 35 30 25 20 15 10 5 5 10
CONNECTION A VDD = 28 V IO = 800 mA TA = 25C
65
95
125
15
20
TA - TEMPERATURE - C
IF - INPUT CURRENT - mA
VO(OFF) - OUTPUT VOLTAGE - V
Figure 14. Typical Turn Off Time vs. Temperature.
Figure 15. Typical Turn Off Time vs. Input Current.
Figure 16. Typical Output Off Capacitance vs. Output Voltage.
9
HSSR-7110 1 IF INPUT OPEN +2 VF -3 4 7 6 5 + 8 CM RM VM MONITOR NODE
VPEAK -
PULSE GENERATOR CM INCLUDES PROBE AND FIXTURE CAPACITANCE RM INCLUDES PROBE AND FIXTURE RESISTANCE
90% VPEAK 10%
90%
10%
tr
tf
VM (MAX)
5V (0.8) V(PEAK) dVO (0.8) V(PEAK) = OR tr tf dt OVERSHOOT ON VPEAK IS TO BE 10%.
Figure 17. Output Transient Rejection Test Circuit.
10
VDD
HSSR-7110 1 IF +2 VF -3 S1 B VIN A 4 7 6 5 8
RL VO CL (CL INCLUDES PROBE PLUS FIXTURE CAPACITANCE )
VI-O + - PULSE GENERATOR
90% VI-O(PEAK) 10%
90%
10%
tr
tf
VO(OFF) S1 AT A (VF = 0 V)
VO(OFF) (min)
3.25 V VO(ON) (max) 0.8
VO(ON) S1 AT B (IF = 10 mA)
(0.8) VI-O(PEAK) dVI-O (0.8) VI-O(PEAK) = OR tf dt tr OVERSHOOT ON VI-O(PEAK) IS TO BE 10%
Figure 18. Input-Output Transient Rejection Test Circuit.
ISOTHERMAL CHAMBER HSSR-7110 IF 1 +2 -3 4 8+ 7 VOS 6 5- DIGITAL NANOVOLTMETER
Figure 19. Voltage Offset Test Setup.
11
HSSR-7110 1 2 VIN RIN 200 4 5 3 8 7 6
ROUT 1.0
VO (SEE NOTE)
5.5 V
ROUT 1.0
Figure 20. Burn-In Circuit.
NOTE: IN ORDER TO DETERMINE VOUT CORRECTLY, THE CASE TO AMBIENT THERMAL IMPEDANCE MUST BE MEASURED FOR THE BURN-IN BOARDS TO BE USED. THEN, KNOWING CA, DETERMINE THE CORRECT OUTPUT CURRENT PER FIGURES 2 AND 4 TO INSURE THAT THE DEVICE MEETS THE DERATING REQUIREMENTS AS SHOWN.
Tje
Tjf1
Tjd
Tjf2
Applications Information
Thermal Model The steady state thermal model for the HSSR-7110 is shown in Figure 21. The thermal resistance values given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistances between the LED and other internal nodes are very large in comparison with the other terms and are omitted for simplicity. The components do, however, interact indirectly through CA, the case-to-ambient thermal resistance. All heat generated flows through CA, which raises the case temperature TC accordingly. The value of CA depends on the conditions of the board design and is, therefore, determined by the designer. The maximum value for each output MOSFET junction-to-case thermal resistance is specified as 15C/W. The thermal resistance from FET driver junction-to-case is also 15C/W. The power dissipation in the FET driver, however, is negligible in comparison to the MOSFETs. On-Resistance and Rating Curves The output on-resistance, RON, specified in this data sheet, is the
104
15 TC
15
15
CA TA Tje = LED JUNCTION TEMPERATURE Tjf1 = FET 1 JUNCTION TEMPERATURE Tjf2 = FET 2 JUNCTION TEMPERATURE Tjd = FET DRIVER JUNCTION TEMPERATURE TC = CASE TEMPERATURE (MEASURED AT CENTER OF PACKAGE BOTTOM) TA = AMBIENT TEMPERATURE (MEASURED 6" AWAY FROM THE PACKAGE) CA = CASE-TO-AMBIENT THERMAL RESISTANCE ALL THERMAL RESISTANCE VALUES ARE IN C/W
resistance measured across the output contact when a pulsed current signal (IO = 800 mA) is applied to the output pins. The use of a pulsed signal ( 30 ms) implies that each junction temperature is equal to the ambient and case temperatures. The steadystate resistance, RSS , on the other hand, is the value of the resistance measured across the output contact when a DC current signal is applied to the output pins for a duration sufficient to reach thermal equilibrium. RSS includes the effects of the temperature rise of each element in the thermal model. Rating curves are shown in Figures 2 and 4. Figure 2 specifies the maximum average output current allowable for a given ambient temperature. Figure 4 specifies the output power dissipation allowable for a given ambient temperature. Above 55C (for CA = 80C/W) and 107C (for CA = 40C/W), the maximum allowable output current and power dissipation are related by the expression RSS = PO(max)/ (IO(max)) 2 from which RSS can be calculated. Staying within the safe area assures that the steady-state junction temperatures remain less than 150C. As an example, for TA = 95C and CA = 80C/W, Figure 2 shows that the output current should be limited to less than
Figure 21. Thermal Model.
610 mA. A check with Figure 4 shows that the output power dissipation at TA = 95C and IO = 610 mA, will be limited to less than 0.35 W. This yields an RSS of 0.94 .
Design Considerations for Replacement of Electro-Mechanical Relays
The HSSR-7110 family can replace electro-mechanical relays with comparable output voltage and current ratings. The following design issues need to be considered in the replacement circuit. Input Circuit: The drive circuit of the electro-mechanical relay coil needs to be modified so that the average forward current driving the LED of the HSSR7110 does not exceed 20 mA. A nominal forward drive current of 10 mA is recommended. A recommended drive circuit with 5 volt VCC and CMOS logic gates is shown in Figure 1. If higher VCC voltages are used, adjust the current limiting resistor to a nominal LED forward current of 10 mA. One important consideration to note is that when the LED is turned off, no more than 0.6 volt forward bias should be applied across the LED. Even a few microamps of current may be sufficient to turn on the HSSR7110, although it may take a considerable time. The drive circuit should maintain at least 5 mA of LED current during the ON condition. If the LED forward current is less than the 5 mA level, it will cause the HSSR-7110 to turn on with a longer delay. In addition, the power dissipation in the output power MOSFETs increases, which, in turn, may violate the power dissipation guidelines and affect the reliability of the device.
Output Circuit: Unlike electromechanical relays, the designer should pay careful attention to the output on-resistance of solid state relays. The previous section, "OnResistance and Rating Curves" describes the issues that need to be considered. In addition, for strictly dc applications the designer has an advantage using Connection B which has twice the output current rating as Connection A. Furthermore, for dc-only applications, with Connection B the on-resistance is considerably less when compared to Connection A. Output over-voltage protection is yet another important design consideration when replacing electro-mechanical relays with the HSSR-7110. The output power MOSFETs can be protected using Metal oxide varistors (MOVs) or TransZorbs against voltage surges that exceed the 90 volt output withstand voltage rating. Examples of sources of voltage surges are inductive load kickbacks, lightning strikes, and electro-static voltages that exceed the specifications on this data sheet. For more information on output load and protection refer to Application Note 1047. References: 1. Application Note 1047, "Low On-Resistance Solid State Relays for High Reliability Applications." 2. Reliability Data for HSSR-7110.
MIL-PRF-38534 Class H and DSCC SMD Test Program
Hewlett-Packard's Hi-Rel Optocouplers are in compliance with MIL-PRF-38534 Class H. Class H devices are also in compliance with DSCC drawing 5962-93140. Testing consists of 100% screening and quality conformance inspection to MIL-PRF-38534.
www.hp.com/go/isolator For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/Canada: 1-800-235-0312 or 408-654-8675
MOV is a registered trademark of GE/RCA Solid State. TransZorb is a registered trademark of General Semiconductor.
Far East/Australasia: Call your local HP sales office. Japan: (81 3) 3335-8152 Europe: Call your local HP sales office. Data subject to change. Copyright (c) 1998 Hewlett-Packard Co. Obsoletes 5965-1142E Printed in U.S.A. 5968-0470E (7/98)

▲Up To Search▲

Price & Availability of HSSR-7110

	To Download HSSR-7110 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .